| PART |
Description |
Maker |
| VIO50-12P1 VII50-12P1 VDI50-12P1 VID50-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
From old datasheet system
|
IXYS[IXYS Corporation]
|
| VUB120-12NO2 VUB120-16NO2 VUB160-16NO2 VUB160-12NO |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT
Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXGN50N60BD2 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| VID25-06P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| VID25-12P1 |
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS
|
| CM20AD05-12H CM20AD00-12H |
CIB Modules: 600V
MITSUBISHI IGBT MODULES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RM60CZ-2H RM60DZ-2H RM60CZ-H RM60DZ-H RM60DZ-M RM6 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| CM100DU-34KA09 |
IGBT MODULES HIGH POWER SWITCHING USE
100 A, 1700 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| 2ED020I12-F |
Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules
|
eupec GmbH
|
| SKM145GB063DN SKM145GAL063DN |
Superfast NPT-IGBT Modules 200 A, 600 V, N-CHANNEL IGBT
|
Semikron International
|
| SEMIX253GB126HDS |
Trench IGBT Modules 260 A, 1200 V, N-CHANNEL IGBT
|
Semikron International
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
